Full silicidation process for making CoSi2 on SiO2
نویسندگان
چکیده
منابع مشابه
CoSi2 heteroepitaxy on patterned Si(100) substrates
The influence of starting surface topography on the nucleation and growth of epitaxial silicide layers was investigated. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si~100! substrates. These substrates contained mesa stripes, running parallel to Si@011#, and exhibited either a number of Si $hkl% facets, or ‘‘smoothly varying’’ sinusoidal profiles. Conventio...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2004
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.1728299